Impurity band conduction in Si-doped β-Ga2O3 films
Abstract
By combining temperature-dependent resistivity and Hall effect measurements, we investigate donor state energy in Si-doped β-Ga2O3 films grown using metal-organic vapor phase epitaxy. High-magnetic field (H) Hall effect measurements (-90 kOe ≤ H ≤ +90 kOe) showed non-linear Hall resistance for T < 150 K, revealing two-band conduction. Further analyses revealed carrier freeze out characteristics in both bands yielding donor state energies of ∼33.7 and ∼45.6 meV. The former is consistent with the donor energy of Si in β-Ga2O3, whereas the latter suggests a residual donor state. This study provides critical insight into the impurity band conduction and the defect energy states in β-Ga2O3 using high-field magnetotransport measurements.
- Publication:
-
Applied Physics Letters
- Pub Date:
- February 2021
- DOI:
- 10.1063/5.0031481
- arXiv:
- arXiv:2010.00193
- Bibcode:
- 2021ApPhL.118g2105R
- Keywords:
-
- Condensed Matter - Materials Science
- E-Print:
- 14 pages