InAlAs/InGaAs/InP heterostructures for microwave photodiodes grown by molecular beam epitaxy
Abstract
Pre-epitaxial (001)InP substrate cleaning, growth of In0.52Al0.48As/In0.53Ga0.47As heterostructures lattice-matched to InP substrate by molecular beam epitaxy technique and manufacturing processes of microwave photodiodes with Schottky barrier are developed in this work.
- Publication:
-
Materials Science and Engineering Conference Series
- Pub Date:
- January 2019
- DOI:
- 10.1088/1757-899X/475/1/012022
- Bibcode:
- 2019MS&E..475a2022D