Study of residual background carriers in midinfrared InAs /GaSb superlattices for uncooled detector operation
Abstract
The midinfrared 7 ML InAs/8 ML GaSb superlattices (SLs) were grown by molecular beam epitaxy at growth temperatures between 370 and 430°C in order to study the intrinsic characteristic of background carriers. Grown SLs were all residual p type with carrier densities in the low 1011cm-2, and a minimum density of 1.8×1011cm-2 was obtained from the SL grown at 400°C. With increasing growth temperature, the in-plane carrier mobility decreased from 8740to1400cm2/Vs due to increased interfacial roughness, while the photoluminescence intensity increased sixfold due to a decrease in the nonradiative defect densities.
- Publication:
-
Applied Physics Letters
- Pub Date:
- February 2008
- DOI:
- 10.1063/1.2884264
- Bibcode:
- 2008ApPhL..92g1102H
- Keywords:
-
- 68.65.Cd;
- 72.20.Ee;
- 81.15.Hi;
- 68.35.Ct;
- 85.60.Gz;
- 73.63.-b;
- Superlattices;
- Mobility edges;
- hopping transport;
- Molecular atomic ion and chemical beam epitaxy;
- Interface structure and roughness;
- Photodetectors;
- Electronic transport in nanoscale materials and structures