Effect of ionized impurities on electron tunneling in GaAssolarAlGaAs triple quantum wells
Abstract
Photoluminescence and electroreflectance measurements in Si δ-doped GaAs/Al0.35Ga0.65-A triple quantum wells are performed in order to study the effect of ionized impurities on electron tunneling. It is theoretically shown that a thin quantum well with a δ-doping layer inserted between narrow and wide quantum wells of asymmetric double quantum wells enhances impurity scattering rate significantly. Photoluminescence decay time is found to decrease 30% at maximum compared with a sample without a δ-doping layer.
- Publication:
-
Superlattices and Microstructures
- Pub Date:
- January 1999
- DOI:
- 10.1006/spmi.1998.0672
- Bibcode:
- 1999SuMi...25..445P