Si III electron temperature diagnostics for the solar transition region
Abstract
R-matrix calculations of electron impact excitation rates for transitions in Si III are used to derive the electron-density-sensitive emission line ratios R1 = I(1113.2 Å)/I(1206.3 Å), R2 = I(1298.9 Å)/I(1206.3 Å), and R3 = I(1296.7 Å)/I(1206.3 Å). A comparison of these with observational data for several solar features obtained with the Harvard S-055 spectrometer on board Skylab reveals that theory and experiment are compatible if the electron temperature of the Si III emitting region of the solar atmosphere is log Te= 4.5, but not if log Te= 4.7. The implication of the choice of a lower temperature on the electron energy distribution function is also briefly discussed.
- Publication:
-
Solar Physics
- Pub Date:
- March 1989
- DOI:
- 10.1007/BF00150010
- Bibcode:
- 1989SoPh..123...33K
- Keywords:
-
- Electron Energy;
- Electron Transitions;
- Line Spectra;
- Plasma Diagnostics;
- Silicon;
- Solar Spectra;
- Emission Spectra;
- Energy Distribution;
- Solar Atmosphere;
- Sunspots;
- Solar Physics;
- Emission Line;
- Electron Impact;
- Electron Temperature;
- Solar Atmosphere;
- Electron Energy Distribution Function