Variable range hopping in doped crystalline semiconductors
Abstract
The computer simulation is made to determine the temperature dependence of the hopping conductivity in the variable range hopping regime. It is found to obey the equation (1) rather than the Mott law. A simple analytical procedure is proposed which fits well the results of simulation.
- Publication:
-
Solid State Communications
- Pub Date:
- December 1979
- DOI:
- 10.1016/0038-1098(79)90484-8
- Bibcode:
- 1979SSCom..32..851E